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Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells

Published online by Cambridge University Press:  10 February 2011

F. Scholz ,
V. HÄrle ,
F. Steuber ,
A. Sohmer ,
H. Bolay ,
V. Syganow ,
A. DÖrnen ,
J.-S. Im ,
A. Hangleiter  and
J-Y. Duboz
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F. Scholz
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
V. HÄrle
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
F. Steuber
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
A. Sohmer
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
H. Bolay
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
V. Syganow
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
A. DÖrnen
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
J.-S. Im
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
A. Hangleiter
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany
J-Y. Duboz
Affiliation:
Thomson CSF, Physics Lab, Lab. Central de Recherche, F-91404 Orsay, France
P. Galtier
Affiliation:
Thomson CSF, Physics Lab, Lab. Central de Recherche, F-91404 Orsay, France
E. Rosencher
Affiliation:
Thomson CSF, Physics Lab, Lab. Central de Recherche, F-91404 Orsay, France
O. Ambacher
Affiliation:
Walter-Schottky-Institut, TU München, D-85748 München, Germany
D. Brunner
Affiliation:
Walter-Schottky-Institut, TU München, D-85748 München, Germany
H. Lakner
Affiliation:
Werkstoffe der Elektrotechnik / FB9, Gerhard Mercator Universität, D-47048 Duisburg, Germany
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Abstract

GaInN/GaN heterostructures and quantum wells have been grown by low pressure metalorganic vapor phase epitaxy on sapphire using an AIN nucleation layer. We found a significant In incorporation only for growth temperatures of 700°C, although still very high In/Ga ratios in the gas phase had to be adjusted. The In content could be increased by reducing the H2/N2 flow ratio in the main carrier gas. GaInN layers typically show two lines in low temperature photoluminescence which are identified as excitonic-like (high energy peak) and impurity-related-like (low energy) by time-resolved spectroscopy. Quantum wells with a thickness between 8 and 0.5 nm showed only one emission line. The peak of the thinnest wells shows excitonic-like behaviour, whereas we found a smooth transition to an impurity-related-like type with increasing thickness. By scanning transmission electron microscopy studies we found indications for composition fluctuations in these thicker quantum wells which may cause localization effects for the excitons and thus be responsible for the observed optical spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

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References

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