Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T08:55:02.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Metal-Metal Interactions of Importance to Electronic Packaging

Published online by Cambridge University Press:  25 February 2011

Chin-An Chang
Chin-An Chang*
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
Get access

Abstract

Metal-metal interactions have been of vital importance to various technologies, including packaging of electronic materials. Extensive interdiffusion and outdiffusion can lead to undesired alloy formation, and oxide formation on the surface which can hinder subsequent bonding processes. Furthermore, the interactions can be profoundly affected by the ambient gases used, either in the joining process or during subsequent storage and operation. One therefore needs a specially designed metallurgy, a diffusion barrier layer, or a proper ambient to deal with such concerns. The effects of ambient and diffusion barriers on the metal-metal interactions are described. Examples are illustrated where extensive interactions across the diffusion barrier are observed, and their impact on the packaging applications discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 72: Symposium G – Electronic Packaging Materials Science II , 1986 , 267
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Thompkins, H. G. and Pinnel, M. R., J. Appl. Phys. 47, 3804 (1976).Google Scholar
2. Chang, Chin-An and Yeh, H. L. (unpublished).Google Scholar
3. Nelson, G. C. and Holloway, P. H., Metallurgical Applications of Surface Analysis Techniques, ASTMSTP 596 (American Society for Testing Materials, Philadelphia, 1976), p. 68.Google Scholar
4. Rairden, J. R., Neugebsuer, C. A., and Sigsbee, R. A., Metall. Trans. 2, 719 (1971).CrossRefGoogle Scholar
5. Ziegler, J. F., Baglin, J. E. E., and Gangulee, A., Appl Phys. Lett. 24, 36 (1974).CrossRefGoogle Scholar
6. Poate, J. M., Turner, P. A., DeBonta, W. J., and Yahalom, J., J. Appl. Phys. 46, 4275 (1975).Google Scholar
7. Hiraki, A., Lugujjo, T. and Mayer, J. W., J. Appl. Phys. 43, 3643 (1972); A. Hiraki, E. Lugujjo, M.-A. Nicolrt, and J. W. Mayer, Phys. Status Solide A7, 401 (1971); Chin-An Chang and G. Ottaviani, Appl. Phys. Lett. 44, 901 (1984).CrossRefGoogle Scholar
8. Lawson, E. M. and Tavendale, A. J., J. Appl. Phys. 53, 8771 (1982).Google Scholar
9. Sinha, A. K. and Poate, J. M., in Thin Films-Interdiffusion and Reactions, ed. Poate, J. M., Tu, K. N. amd Mayer, J. W. (Wiley, New York, 1978), p. 407.Google Scholar
10. Baglin, J. E. E. and Poate, J. M., in Ref. 9, p. 305.Google Scholar
11. Shih, Da-Yuan and Ficalora, P. J., 16th Annual Proceedings Reliability Physics 1978, p. 268.Google Scholar
12. Kang, K. D., Burgess, R. R., Coleman, M. G., and Keil, J. G., IEEE Trans. Electron Devices 16, 356 (1969).Google Scholar
13. See, for example, Ref. 9.Google Scholar
14. Ottaviani, G., J. Vac. Sci. Tech. 16, 1112 (1979).Google Scholar
15. Chang, Chin-An., J. Electrochem. Soc. 127, 1331 (1980); Appl. Phys. Lett. 38, 860 (1981); Mat. Res. Soc. Sym. Proc. Vol.25, p. 111 (1984).Google Scholar
16. Chang, Chin-An., in Diffusion Phenomena in Thin Films, ed. Gupta, D. and Ho, P. S., Noyes Publication, New Jersey, in press.Google Scholar
17. Pauling, L., The Nature of the Chemical Bond, 3rd. Ed., Cornell University Press, New York (1960), p. 98.Google Scholar
18. Surplice, N. A. and Brearly, W., Surf. Sci. 52, 62 (1975).CrossRefGoogle Scholar
19. Wells, R. L. and Fort, R., Jr., Surf. Sci. 32, 554 (1972).Google Scholar
20. Sormorjai, G. A., Principles of Surface Chemistry (Prentice-Hall, Englewood Cliffs, 1972), p. 249.Google Scholar
21. Chang, Chin-An and Chu, W. K., Appl. Phys. Lett. 37, 161 (1980).Google Scholar
22. Chang, Chin-An and Chu, W. K., J. Appl. Phys. 52, 512 (1981).Google Scholar
23. Chang, Chin-An, J. Appl. Phys. 52, 4620 (1981).Google Scholar
24. Chang, Chin-An, J. Appl. Phys. 53, 7092 (1982).CrossRefGoogle Scholar
25. Chang, Chin-An, J. Appl. Phys. 53, 7088 (1982).Google Scholar
26. Chang, Chin-An, Appl. Phys. Lett. 44, 310 (1984).CrossRefGoogle Scholar
27. Morabito, J. M., Thomas, J. H., 1II, and Lesh, N. G., IEEE Transactions on Part, Hybrids, and Packaging, Vol. PHP-11, 253 (1975).Google Scholar
28. Chang, Chin-An, J. Appl. Phys., in press.Google Scholar