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Metallurgical and Electrical Properties of Capped Au-based Metallizations on GaAs

Published online by Cambridge University Press:  22 February 2011

X. W. Lin ,
A. Piotrowska ,
E. Kaminska ,
Z. Liliental-Weber  and
J. Washburn
X. W. Lin
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
E. Kaminska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

Gold-based contacts on GaAs, i.e., Au(Te)/n-GaAs, Au(Ge)/n-GaAs, and Au(Zn)/p- GaAs, were annealed with or without an Al2O3 cap, in order to examine the effects of capping on their metallurgical and electrical properties. Current-voltage measurements showed that ohmic contact can be formed for all the metallizations, except capped Au(Te) which remained nonohmic even after annealing up to 480°C. Transmission electron microscopy and x-ray diffraction observations showed that the reactions between a contact and GaAs can be strongly affected by a capping layer. For all uncapped contacts, annealing generally resulted in growth of Au-Ga compounds and nonuniform contact morphology, whereas capped Au(Ge) and Au(Zn) contacts were stable and retained flat interface with GaAs. Capped Au(Te) was found to be unstable, reacting extensively with GaAs, due to the presence of Te. Electrical data are explained in terms of the doping model for ohmic contact formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 285
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Vidimari, F., Electron. Lett. 15, 675 (1979).Google Scholar
2. Barcz, A.J., Kaminska, E., and Piotrowska, A., Thin Solid Films 149, 251 (1987).Google Scholar
3. Zeng, X.F., Chung, D.D.L., and Lakhani, A., Solid-State Electron. 30, 1259 (1987).Google Scholar
4. Lin, X.W., Liliental-Weber, Z., Washburn, J., Piotrowska, A., and Kaminska, E., Mat. Res. Soc. Symp. Proc. 260, 496 (1992).Google Scholar
5. Lin, X.W., Liliental-Weber, Z., Washburn, J., Piotrowska, A., and Kaminska, E., J. Vac. Sci. Technol. B 11, 44 (1993).Google Scholar
6. Lin, X.W., Piotrowska, A., Kaminska, E., Liliental-Weber, Z., Washburn, J., and Weber, E., Appl. Phys. Lett. (in press); A. Piotrowska, E. Kaminska, X. W. Lin, Z. LilientalWeber, J. Washburn, E. Weber, S. Gierlotka, J. Adamczewska, S. Kwiatkowski, and A. Turos, J. Vac. Sci. Technol. B (in press).Google Scholar
7. Kaminska, E., Piotrowska, A., Barcz, A., Adamczewska, J., and Turos, A., Solid-State Electron. 29, 279 (1986).Google Scholar
8. Pugh, J.H. and Williams, R. S., J. Mater. Res. 1, 343 (1986).Google Scholar
9. Piotrowska, A., Kaminska, E., Kwiatkowski, S., and Turos, A., J. Appl. Phys. (in press).Google Scholar
10. Dornath-Mohr, M.A., Cole, M.W., Lee, H.S., Fox, D.C., Eckart, D.W., Yerke, L., Wrenn, C.S., Lareau, R.T., Chang, W.H., Jones, K.A., and Cosandey, F., J. Electron. Mater. 19, 1247 (1990).Google Scholar
11. Zeng, X.F. and Chung, D.D.L., Thin Solid Films 93, 207 (1982).Google Scholar
12. Robinson, G.Y., in Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by Wilmsen, C.W., (Plenum Press, New York, 1985), p. 73.Google Scholar