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Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

Published online by Cambridge University Press:  25 February 2011

T. S. Huang ,
J. G. Peng  and
C. C. Lin
T. S. Huang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, TAIWAN, R.O.C.
J. G. Peng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, TAIWAN, R.O.C.
C. C. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, TAIWAN, R.O.C.
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Abstract

The interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 511
Copyright
Copyright © Materials Research Society 1992

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References

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