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Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films

Published online by Cambridge University Press:  11 February 2011

M. Miyao ,
H. Kanno ,
I. Tsunoda ,
T. Sadoh  and
A. Kenjo
M. Miyao
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
H. Kanno
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
I. Tsunoda
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
T. Sadoh
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
A. Kenjo
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
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Abstract

Metal-induced low temperature (≤ 550 °C) crystallization of a-Si1-xGex (0 ≤ × ≤ 1 ) layers on SiO2 films has been investigated. For low Ge fractions below 20 %, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40–60 %. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained at the optimized growth conditions (x: 0.4, annealing: 450 °C, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M2.8
Copyright
Copyright © Materials Research Society 2003

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References

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