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Metal-containing diamond-like carbon-silicon nanocomposite films as temperature sensors

Published online by Cambridge University Press:  01 February 2011

T. Takeno ,
T. Takagi ,
A. Bozhko ,
M. Shupegin  and
T. Sato
T. Takeno
Affiliation:
Institute of Fluid Science, Tohoku University, Sendai 980–8577, Japan
T. Takagi
Affiliation:
Institute of Fluid Science, Tohoku University, Sendai 980–8577, Japan
A. Bozhko
Affiliation:
Moscow State University, Physics Department, Moscow 119899, Russia
M. Shupegin
Affiliation:
Moscow Power Engineering Institute, Moscow 105835, Russia
T. Sato
Affiliation:
Institute of Fluid Science, Tohoku University, Sendai 980–8577, Japan
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Abstract

Metal-carbon nanocomposites are characterized by a number of unique properties, perspective for the various-type applications. The presented experimental data on the conductivity of amorphous tungsten- and niobium-containing carbon-silicon nanocomposite films show the possibility of the design of advanced wide-range temperature sensors, which are expected to possess the chemical stability, biocompatibility, mechanical, and other properties typical for this class of materials. The films were deposited onto polycrystalline substrates using combination of PECVD(Plasma Enhanced Chemical Vapor Deposition) of siloxane vapors and magnetron co-sputtering of metal target. The conductivity σ of the films, measured using standard 4-probe technique in the temperature range 80–400K, is characterized by the gradual decrease with temperature. The experimental σ(T) dependences are well fitted by the universal power expression, σ(T)= σ0+aTn, where σ0, a, and n are the fitting parameters dependent on the value of metal concentration. The conductivity mechanisms in the investigated amorphous metal-containing carbon-silicon nanocomposite films are discussed in the framework of the model of inelastic tunneling in amorphous insulators in the presence of the structural transformation in carbon-silicon matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 785: Symposium D – Materials and Devices for Smart Systems , 2003 , D14.11
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Martino, C. De., Fusco, G., Mina, G., Tagliaferro, A., Vanzetti, L., Calliari, L., Anderle, M., Diamond Rel. Mater. 6, 559–563 (1977)10.1016/S0925-9635(96)00613-9Google Scholar
2. Dimigen, H., Hübsch, H., Memmig, R., Appl. Phys. Lett. 50, 1056 (1987)10.1063/1.97968Google Scholar
3. Glazman, L.I., Matveev, K.A., Sov. Phys. JETP 67, 1276 (1988)Google Scholar
4. Glazman, L.I., Shekhter, R.I., Sov. Phys. JETP 67, 1462 (1988)Google Scholar
5. Sheng, Ping, Abeles, B., Arie, Y., Phys. Rev. Lett. 31, 44 (1973)10.1103/PhysRevLett.31.44Google Scholar
6. Chhowalla, M., Ferrari, A.C., Robertson, J., Amaratunga, G.A.J., Appl. Phys. Lett. 76, 1419 (2000)10.1063/1.126050Google Scholar
7. Ferrari, A.C., Robertson, J., Phys. Rev. B61, 14095 (2000)10.1103/PhysRevB.61.14095Google Scholar
8. Dasgupta, D., Demichelis, F., Tagliaferro, A., Phil. Mag. B, 63, 1255 (1991)10.1080/13642819108205558Google Scholar