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Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine

Published online by Cambridge University Press:  03 September 2012

T. Schmidtling ,
M. Klein ,
U.W. Pohl  and
W. Richter
T. Schmidtling
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, D - 10623 Berlin, Germany
M. Klein
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, D - 10623 Berlin, Germany
U.W. Pohl
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, D - 10623 Berlin, Germany
W. Richter
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, D - 10623 Berlin, Germany
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Abstract

GaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.43
Copyright
Copyright © Materials Research Society 1999

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