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Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

Published online by Cambridge University Press:  26 February 2011

Shalini Gupta
Affiliation:
[email protected], Georgia Institue of Technology, Electrical Engineering, United States
Hun Kang
Affiliation:
Hun Kang , Georgia Institue of Technology, Electrical Engineering, United States
Matthew Kane
Affiliation:
[email protected], Georgia Institue of Technology, Electrical Engineering, United States
William E Fenwick
Affiliation:
[email protected], Georgia Institue of Technology, Electrical Engineering, United States
Nola Li
Affiliation:
[email protected], Georgia Institue of Technology, Electrical Engineering
Martin Strassburg
Affiliation:
[email protected], Georgia Institue of Technology, Electrical Engineering, United States
Ali Asghar
Affiliation:
[email protected], Georgia Institue of Technology, Electrical Engineering, United States
Nikolaus Dietz
Affiliation:
[email protected], Georgia State University, Physics and Astronomy, United States
Ian T Ferguson
Affiliation:
[email protected], Georgia Institue of Technology, Electrical Engineering, United States
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Abstract

Quantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect of in-situ activation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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