Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:14:40.912Z Has data issue: false hasContentIssue false
  • English
  • Français

Metal Contact Formation On Zinc Cadmium Telluride Detector Material

Published online by Cambridge University Press:  10 February 2011

Arnold Burger ,
Henry Chen ,
Kuo-Tong Chen ,
Detang Shi ,
W. Eugene Collins  and
R. B. James
Arnold Burger
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
Henry Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
Kuo-Tong Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
Detang Shi
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
W. Eugene Collins
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
R. B. James
Affiliation:
Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, CA 94550
Get access

Abstract

The understanding of the electric contact formation process is critical in exploiting the full potential of Cd1−xZnxTe(CZT) material for room temperature detection applications. The metalsemiconductor electrical characteristics were shown in this study to be strongly affected by the surface preparation steps prior to metallization (polishing, and chemical etching), the choice of the metal and contact deposition technique, and by the subsequent surface passivation of CdZnTe. In this paper, we also present the implementation new detector fabrication processing stepsresulting in a significant lowering of the dark leakage current and an improvement in the detector performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 83
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sudharsanan, R., Vakelis, G. D., and Karam, N. K., 1996 U.S. Workshop on the Physics and Chemistry of II-VI Materials, 1996, to be published in Journal of Electronic Materials.Google Scholar
2. Chen, H., Egarievwe, S. U., Hu, Z., Tong, J., Shi, D. H., Wu, G. H.,Chen, K.-T., George, M. A., Collins, W. E., Burger, A., James, R. B., Stahle, C. M., and Bartlett, L. M., SPIE Proceedings, Vol. 2859, pp. 254, (1996).Google Scholar
3. Chen, H., Tong, J., Hu, Z., Shi, D. T., Wu, G. H., Chen, K.-T., George, M. A., Collins, W. E., Burger, A., James, R. B., and Stahle, C. M., J. Appl. Phys. 80(6), 3509, (1996).Google Scholar
4. Spicer, W. E., Lindau, I., Su, C. Y., and Chye, P., Phys. Rev. Lett 44, 420, (1980).Google Scholar
5. Stahle, C. M., Shi, Z. Q., Hu, K., Barthelmy, S. D., Snodgrass, S. J., Bartlett, L. M., Shu, P. K., Lehtonen, S. J., Mach, K. J., Proceeding of SPIE, Vol.3115, p. 90, 1997.Google Scholar
6. Burger, A., Chen, H., Tong, J., Shi, D., George, M. A., Chen, K.-T., Collins, W.E., James, R. B., Stahle, C. M. and Bartlett, L. M., IEEE Trans. Nucl. Sci., Vol 44/3, 934, (1997).Google Scholar
7. Cordes, H. and Schmid-Fetzer, R., Semicond. Sci. Technol. 10, 77, (1995).Google Scholar
8. Nemirovsky, Y., Rusin, A., Asa, G., and Gorelik, Y., and Li, L., Journal of Electronic Materials, Vol. 26, No. 6, 756, (1997).Google Scholar
9. Egarievwe, S. U., Chen, K.-T. and Burger, A.; James, R. B. and Lisse, C. M., Journal for X-ray Science and Technology, Vol. 6, 309, (1996).Google Scholar
10. Chen, K.-T., Shi, D. T., Chen, H., Grandeson, B., George, M. A., Collins, W. E. and Burger, A., Journal of Vacuum Science Technol. A, 15(3), 850, (1997).Google Scholar
11. Chen, H., Chattopadhyay, K., Chen, K.-T., Burger, A., James, R. B., George, M. A., and Gregory, J. C., Weimer, J. J. and Nag, P. K., submitted to Journal of Vacuum Science Technol. A, 1997 Google Scholar
12. Rhiger, D. R. and Kvaas, R. E., J. Vac. Sci. Technol. 21, 168 (1982)Google Scholar
13. Raj, Brajesh K., Bist, H. D., Katiyar, R. S., Chen, K. T. and Burger, A., J. Appl. Phys., 80(1), 480 (1996).Google Scholar