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Mesotaxy Layers of IrSi3 in (111)Si Formed by MeV ION Implantation

Published online by Cambridge University Press:  28 February 2011

K. T. Short ,
Alice E. White ,
D. J. Eaglesham ,
D. C. Jacobson  and
J. M. Poate
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Alice E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Iridium has been implanted at 1MeV and 500keV in the dose range 1 to 3×1017/cm2 at 525°C to form a buried Ir-rich region ∼ 2500Å below the surface in (111)Si. Samples were annealed at temperatures in the range 600°C to 1200°C to form buried IrSi3 layers. Rutherford backscattering and channeling analysis in conjunction with transmission electron microscopy were used to study the formation and the alignment of the IrSi3 layer to the silicon host as a function of annealing. For a dose of 2×1017 Ir/cm2, stoichiometric IrSi3 formed beneath ∼ 2000Å of Si after annealing to 1100°C. The IrSi3 layer was aligned with the Si substrate with Xmin ∼12%, but a band of precipitates remained either side of the main layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 279
Copyright
Copyright © Materials Research Society 1992

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References

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