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Mechanisms of Transition Metal Diffusion into Semiconductor Film

Published online by Cambridge University Press:  21 February 2011

M. G. Goldiner  and
A. V. Vaysleyb
M. G. Goldiner
Affiliation:
Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109
A. V. Vaysleyb
Affiliation:
Department of Materials Science, Henry Krumb School of Mines, Columbia University, New York, 10027
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Abstract

Descriptions of metal (Me) diffusion into semiconductor (Se) film by diffusion-kinetic and purely kinetic methods were compared. To analyze thin film diffusion, thin film surfaces were considered as a substantial source/sink of point defects. Conditions of transition from one Me diffusion transport mechanism/regime to another, when Se sample thickness is changed, were found to be practically the same in both considerations. Critical Se film size, dislocation density, and temperature of diffusion mechanisms and regimes coincide, providing a correct interpretation of the experimental results in terms of the corresponding diffusion mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 57
Copyright
Copyright © Materials Research Society 1993

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References

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