Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:34:25.871Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanisms of Post-CMP Cleaning

Published online by Cambridge University Press:  18 March 2011

H. Liang ,
E. Estragnat  and
J. Lee
H. Liang
Affiliation:
University of Alaska Fairbanks; K. Bahten and D. McMullen, Rippey Corporation
E. Estragnat
Affiliation:
University of Alaska Fairbanks; K. Bahten and D. McMullen, Rippey Corporation
J. Lee
Affiliation:
University of Alaska Fairbanks; K. Bahten and D. McMullen, Rippey Corporation
Get access

Abstract

We investigate the post-CMP cleaning process with a tribological approach. A cleaning process involves three components: brush, wafer/disk, fluid undergoing three-body sliding contact between the brush, wafer, and particles from slurry. Having this in mind, we investigated cleaning mechanisms through experimental measurement of friction force and analyzed the contact condition for particle removal. Our investigation leads to the conclusions that the cleaning process is a boundary to elastohydrodynamic lubricating process that involves a constant contact between a brush and the wafer or disk surface. The motion of the brush nodule is such that the surface forces between the brush and workpiece change from an initial adhesion to sliding abrasion. These analysis leads to insight of particle removal mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M7.4
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Cooper, Douglas W., Linke, Rob C. and Andreas, Michael T., Comparing the effectiveness of knobby and ridged post-CMP cleaning brushes, MICRO, July/August 1999 Google Scholar
2 Zhang, Fan, Busnaina, Ahmed A, and Ahmadi, Goodarz, Particle Adhesion and Removal in Chemical Mechanical Polishing and Post-CMP cleaning, Journal of The Electrochemical Society (1999)10.1149/1.1391989Google Scholar
3 Zhao, E., Zhang, L., Li, H., Hymes, D., de Larios, J.M., Krusell, W.C., Copper CMP Cleaning using Brush Scrubbing, Technical Proceedings CMP-MIC Conference, San Jose (1998).Google Scholar
4 Higashi, G.S., and Chabal, Y.J., in: Handbook of Semiconductor Wafer Cleaning Technology (Kern, Werner ed.), pp. 433–496, Noyes Publications, New Jersey (1993).Google Scholar
5 Hymes, D.J., Ravkin, M., Zhang, X., Krusell, W.C., Method and Apparatus for Cleaning of Semiconductor Substrates using Hydrofluoric Acid (HF), United States Patent #5,868,863, (1999)Google Scholar
6 Steigerwald, J.M., Murarka, S.P., and Gutmann, R.J., Chemical Mechanical Planarization of Microelectonic Materials, John Wiley & Sons, Inc., New York, (1997)Google Scholar
7 W. Cooper, Douglas, Linke, Rob C. and Andreas, Michael T., Comparing the effectivness of knobby and ridged post-CMP cleaning brushes, MICRO, July/August 1999 Google Scholar
8 Ravkin, M.A, Hetherington, D.L., de Larios, J.M., Gardner, D.G., and Kruseell, W.C., A New Chemical Mechanical Scrubbing Process using HF for Post-CMP Cleaning Application, Technical Proceedings CMP-MIC Conference, San Jose (1996)Google Scholar
9 , Rippey, Critical Cleaning ExpertsTM , Technical Information, (2000)Google Scholar
10 Stribeck, R., “Characteristics of Plain and Roller Bearings,“ Zeit. Ver. Dent, Ing. 1902.Google Scholar
11 Coulomb, C.A., Mémoire de Mathématique et dePhysique de l'Académie Royale, Paris, (1785).Google Scholar
12Prof. , Mori and Liang, H., private conversations, July, 2000.Google Scholar
13CRC Handbook of Chemistry and Physics, 68th Edi., 1987-1988.Google Scholar
14 Dickson, J.T., Park, N.-S., Kim, M-W., and Langford, S.C., “A Scanning Force Microscope Study of a Tribochemical System: Stress-Enhanced Dissolution,” Trib. Lett. 3, pp.69–80, 1997.10.1023/A:1019135828336Google Scholar