Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-07T20:27:24.142Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanisms of Excimer Laser Ablation of Wide Band-Gap Materials: the Role of Defects in Single Crystal MgO

Published online by Cambridge University Press:  01 January 1992

J. T. Dickinson ,
L. C. Jensen ,
R. L. Webb ,
M. L. Dawes  and
S. C. Langford
J. T. Dickinson
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164–2814
L. C. Jensen
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164–2814
R. L. Webb
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164–2814
M. L. Dawes
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164–2814
S. C. Langford
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164–2814
Get access

Abstract

Laser ablation has important applications in surface modification, materials analysis, and thin film deposition. We have been examining the details of processes that lead to the emission and formation of particles (atomic/molecular ground state neutrals, excited neutrals, tions, electrons) when wide band gap materials are irradiated with pulsed UV laser light. Etching and deposition of wide bandgap materials is of particular interest due to their excellent insulating and optical properties. Our studies bear directly on achieving control of emission intensities and particle characteristics for use in film deposition and materials analysis. In model wide bandgap materials such as single crystal alkali halides and MgO (nominally transparent materials), exposure to repeated pulses of 248 nm excimer laser radiation of a few J/cm2 results in substantial interaction including extensive biaxial deformation and cleavage. Significant surface heating also occurs, consistent with strong free-carrier/laser interactions. We present strong evidence that achieving intense emission of atomic, molecular, and ionic particles actually depends on point defect production by laser-induced deformation and fracture. Defect production via dislocation motion yields orders of magnitude increases in laser vaporization of these wide bandgap materials, including cluster ion formation. The dependence of the laser-material interaction on dislocation density and mobility, as well as point defect density, suggests several novel strategies for the enhancing the ablative response or preventing laser damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 131
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Allmen, Martin von, Laser-Beam Interactions with Materials, Springer Verlag, Berlin (1987), pp. 34–39.Google Scholar
2. Mathias, E. and Green, T. A., in Desorption Induced by Electronic Transitions: DIET IV, Betz, G. and Varga, P., editors, Springer Verlag, Berlin (1990), pp. 112–127.Google Scholar
3. Webb, R. L., Jensen, L. C., Langford, S. C., and Dickinson, J. T., “Interactions of wide bandgap single crystals with 248 nm excimer laser radiation: I. MgO”, submitted to J. Appl. Phys.Google Scholar
4. Webb, R. L., Jensen, L. C., Langford, S. C., and Dickinson, J. T., “Interactions of wide bandgap single crystals with 248 nm excimer laser radiation: II. NaCl”, submitted to J. Appl. Phys. Google Scholar
5. Dickinson, J. T., Langford, S. C., Jensen, L. C., Eschbach, P. A., Pederson, L. R., and Baer, D. R., J. Appl. Phys. 6, 1831 (1990).Google Scholar
6. Webb, R. L., Langford, S. C., Jensen, L. C., and Dickinson, J. T., Mat. Res. Soc. Symp. Proc., 236, 21 (1992).Google Scholar
7. Tsai, T. E., Griscom, D. L., and Friebele, E. J., Phys. Rev. Lett. 61, 444 (1988).Google Scholar
8. Devine, R. A. B., Phys. Rev. Lett. 62, 340 (1989).Google Scholar
9. Dickinson, J.T. and Webb, R. L., “Imaging of Photoluminescence in Single Crystal MgO Due to Deformation-Induced Point Defects,” in preparation.Google Scholar
10. Chen, Y., Abraham, M. M., Turner, T. J., and Nelson, C. M., Philos. Mag. Series 8 32, 99 (1975).Google Scholar
11. Dickinson, J. T., Jensen, L. C., Webb, R. L., Dawes, M. L., and Langford, S. C., “The role of cleavage-induced defects in the onset of UV laser ablation of MgO,” submitted to J. Appl. Phys. Google Scholar
12. Forwood, C.T. and Lawn, B. R., Philos. Mag. Series 8 13, 602 (1966).Google Scholar
13. Bloembergen, N., Applied Optics 12, 661–664 (1973).Google Scholar
14. Eschbach, P. A., Dickinson, J. T., Langford, S. C., and Pederson, L. R., J. Vac. Sci. Technol. A 7, 2943 (1989).Google Scholar
15. Rosenblatt, G. H., Rowe, M. W., Williams, G. P. Jr., Williams, R. T., and Chen, Y., Phys. Rev. B 39 10309 (1989).Google Scholar
16. Epifanov, A. S., Soy. Phys. JETP 40, 897 (1975).Google Scholar
17. Shen, X. A., Jones, S. C., and Braunlich, P., Phys. Rev. Lett. 62, 2711 (1989).Google Scholar
18. Henrich, V. E., in Structuresand Propertiesof MgO andA1203 Ceramics, edited by Kingery, W. D., (American Ceramic Society, Columbus, Ohio, 1984), pp. 205–216.Google Scholar
19. Satoko, C., Tsukada, M., and Adachi, H., J. Phys. Soc. Jpn. 45, 1333 (1978).Google Scholar
20. Pennycook, S.J. and Brown, L. M., J. Luminescence 18/19. 905 (1979).Google Scholar
21. Bolton, J. D., Henderson, B., and O'Connell, D. O., Solid State Commun. 3, 287 (1981).Google Scholar
22. Nowick, A. S., MRS Bulletin 16(11) 38 (November, 1991).Google Scholar