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Mechanism of the Oxygen Interaction with a Surface of Thin Nanosized Metal Oxide Film

Published online by Cambridge University Press:  01 February 2011

Vladimir I. Brinzari ,
Serghei V. Dmitriev  and
Ghenadii S. Korotcenkov
Vladimir I. Brinzari
Affiliation:
Department of Opto- and Microelectronics, Technical University of Moldova 168 Blv. Stefan cel Mare, Chisinau, MD-2004, Moldova
Serghei V. Dmitriev
Affiliation:
Department of Industrial and Environmental Chemistry, Moldova State University, 60 Mateevich Str., Chisinau, MD-2009, Moldova
Ghenadii S. Korotcenkov
Affiliation:
Department of Opto- and Microelectronics, Technical University of Moldova 168 Blv. Stefan cel Mare, Chisinau, MD-2004, Moldova
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Abstract

This paper presents result of investigation of the oxygen interaction with a surface of semiconductor metal oxide film. The idea to carry out such research is connected with the key role, which oxygen plays in the processes of impurity gas molecules detection in atmosphere and semiconductor surface sensibilization. Numerical modeling of the interaction was carried out for different temperatures and oxygen partial pressures. Results of modeling are compared with the results of experimental study of oxygen-semiconductor film system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A5.9
Copyright
Copyright © Materials Research Society 2005

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References

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