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Mechanism of in-Situ Photoluminescence Decay in Porous Silicon and its Application to Maskless Patterning

Published online by Cambridge University Press:  28 February 2011

Mikio Takai ,
Sanae Indou  and
Hisanori Murase
Mikio Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, 560 Osaka, Japan
Sanae Indou
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, 560 Osaka, Japan
Hisanori Murase
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, 560 Osaka, Japan
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Abstract

PL decay in a time scale of ms for fresh porous Si surfaces was investigated for different atmospheres and excitation intensities to clarify the mechanism of the PL decay. The PL excitation intensity and atmosphere were found to affect the decay of PL, which was due to laser enhanced oxidation.

Locally PL excited areas of porous Si were also found to be etched in a HF solution. Maskless patterning using this effect could be performed by a scan of a focused laser beam followed by HF etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 323
Copyright
Copyright © Materials Research Society 1993

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References

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