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Mechanism of Defect Reactions in Semiconductors

Published online by Cambridge University Press:  31 January 2011

Yuzo Shinozuka
Yuzo Shinozuka*
Affiliation:
[email protected]
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Abstract

Proposed mechanisms so far on defect reactions in semiconductors are reexamined. Structural instability of point defects is explained in terms of the Jahn-Teller effect. It is found that the tetrahedral coordinated bonds, which do not have inversion symmetry, are not so rigid as we consider, especially for hole localization. Second topic is the phonon-kick mechanism for defect reactions under carrier injection. In order to discuss this mechanism in detail, we recall the configuration coordinate (c-c) diagram, which is often misunderstood in the literature. The proper relation is explained among the lattice distortion, the position of the electronic level in the band gap (thermal and optical depths), the total energy the multiphonon (e and h) carrier capture processes and the following induced lattice relaxation. A numerical simulation has been performed on phonon kick mechanism. It is found that a rapid increase of the transient lattice vibration around the defect is possible and the probability critically depends on the carrier concentrations and the phonon frequency distribution.

Keywords

defectselectron-phonon interactionsdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B02-02
Copyright
Copyright © Materials Research Society 2010

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