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Mechanical Stress Measurements in Damascene-Fabricated Aluminum Interconnect Lines

Published online by Cambridge University Press:  10 February 2011

Paul R. Besser
Paul R. Besser*
Affiliation:
Technology Development Group, Advanced Micro Devices, Inc., One AMD Place, Sunnyvale, CA 94088, [email protected]
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Abstract

The mechanical stress state of damascene-fabricated Al interconnect lines was determined on an array of lines on the product die of a logic technology device. Narrow, unpassivated, damascene Al lines have a purely hydrostatic stress (108 MPa). The hydrostatic stress of damascene Al lines (411 MPa) is much larger once the dielectric is deposited. However, the maximum shear stress remains small in magnitude, compared to RIE Al lines of similar thermal history and aspect ratio. The stress of damascene lines was measured as a function of linewidth. Unpassivated, wide lines, have compressive stresses along the length and width and zero along the line height. Passivated wide lines have a biaxial, tensile stress in-plane and zero along the line height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 433
Copyright
Copyright © Materials Research Society 2000

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