Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T06:57:03.137Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanical Behavior of Encapsulants in Microelectronic Packaging

Published online by Cambridge University Press:  26 February 2011

C.P. Wong
C.P. Wong*
Affiliation:
AT&T Bell Laboratories, P.O. Box 900, Princeton, NJ 08540
Get access

Abstract

A modern electronic device is a complex 3-dimensional structure that consists of millions of components for each single IC chip. This complex and delicate device requires effective encapsulation and packaging to ensure its long-term reliability. The device encapsulant requires not only excellent electrical, physical properties, but also suitable mechanical properties for the hostile and extreme temperature cycling requirements. Hence, the mechanical behavior of the encapsulant plays a critical role in the device reliability.

Low stress encapsulants are the preferred choice for microelectronic packaging. Silicone-base materials, with their low modulus and excellent electrical properties, are one of the best encapsulants. However, the intrinsic elastic (to soft gel-like) silicone properties provide weak mechanic protection of the IC device. We have, however, modified the silicone material with a high loading of silica to improve its mechanical and physical properties. This high silica filler loading material improves its mechanical property, but it also increases its modulus. This modified high modulus silicone material tends to have microcracks during the high temperature cycling testing. In this paper, I will describe a modified version of the enhanced mechanical property silicone-base encapsulant, the materials formulation, the curing and the thermal mechanical protecting mechanism and its application to AT&T's No. 5 Electronic Switching System (ESS) Gated Diode Crosspoint (GDX) hybrid IC supplemental insulating layer (SIL) materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 57
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sze, S.M., Ed., in VLSI Technology, (McGraw-Hill, New York, 1983).Google Scholar
2. White, M. L., Proc. IEEE, Vol.57,1610 (1969).Google Scholar
3. Mancke, R. G., IEEE Transactions on Components, Hybrids and Manufacturing Technology, Vol. 4, No. 4", 492 (1981).Google Scholar
4. Jaffe, D. and Soos, N., (Proc. 28th Electronic Components Conf.), 213 (1978).Google Scholar
5. Wong, C. P., The International Journal for Hybrids and Microelectronics, Vol. 4, (2), 315 (1981).Google Scholar
6. Wong, C. P., Advances in Polymer Sciences, Vol. 84, 63 (1988).Google Scholar
7. Otsuka, K., Shirai, Y., and Okutani, K., IEEE Transactions on Components, Hybrids and Manufacturing Technology, Vol. 7, No. 4, 249 (1984).Google Scholar
8. Wong, C. P., in Polymers for Electronic Applications, edited by Lai, J., (CRC Press, 1989), Chapter 3, pp.63–92.Google Scholar
9. Wong, C. P., Journal of Electronic Packaging, American Society for Mechanical Engineering, Vol. 111, 97 (1989).Google Scholar
10. Wong, C. P., Segelken, J. M., and Balde, J. W., IEEE Transactions on Components, Hybrids and Manufacturing Technology, Vol. 12, No. 4, 419 (1989).Google Scholar
11. Filas, R. W., Johnson, B. H., and Wong, C. P., IEEE Transactions on Components, Hybrids and Manufacturing Technology, Vol. 13, No. 1, 133 (1990).Google Scholar
12. Wong, C. P., Journal of Materials Research, Vol. 5, No. 4, 795 (1990).Google Scholar
13. Wong, C. P., IEEE Transactions on Components Hybrids and Manufacturing Technology Vol. 13, No. 4, 759 (1990).Google Scholar