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Measurements of the Transient Photoconductivity During the Growth of A-Si:H Multilayers

Published online by Cambridge University Press:  25 February 2011

H. C. Neitzert ,
A. Werner ,
W. Kunst  and
M. Kunst
H. C. Neitzert
Affiliation:
Hahn-Meitner-Institut, D-1000 Berlin 39, W. Germany.
A. Werner
Affiliation:
Hahn-Meitner-Institut, D-1000 Berlin 39, W. Germany.
W. Kunst
Affiliation:
Hahn-Meitner-Institut, D-1000 Berlin 39, W. Germany.
M. Kunst
Affiliation:
Hahn-Meitner-Institut, D-1000 Berlin 39, W. Germany.
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Abstract

The deposition process of multiple layer structures of intrinsic and p-type hydrogenated amorphous silicon was followed by measuring the microwave detected transient photoconductivity (TRMC) during the film growth. In an i-p-i structure we can show that after deposition of an upper layer of about 500 nm, former deposited layers do not influence the TRMC-signal any more. In an i-p+-i-p structure we can clearly distinguish between p-layers of different doping concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 609
Copyright
Copyright © Materials Research Society 1990

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References

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