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Measurements of 1/f Noise in A-Si:H Pin Diodes and Thin-Film-Transistors

Published online by Cambridge University Press:  25 February 2011

Gyuseong Cho ,
J. S. Drewery ,
I. Fujieda ,
T. Jing ,
S. N. Kaplan ,
V. Perez-Mendez ,
S. Qureshi ,
D. Wildermuth  and
R. A. Street
Gyuseong Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
J. S. Drewery
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
I. Fujieda
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. Qureshi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
R. A. Street
Affiliation:
Xerox PARC, Palo Alto, CA 94304
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Abstract

We measured the equivalent noise charge of a-Si:H pin diodes (5 ∼ 45 μm i-layer) with a pulse shaping time of 2.5 μ.sec under reverse biases up to 30 V/μm and analyzed it as a four component noise source. The frequency spectra of 1/f noise in the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 μm was measured to be the dominant component up to ∼100kHz for both saturation and linear regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 393
Copyright
Copyright © Materials Research Society 1990

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References

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