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Measurement of Ultrafast Melting and Regrowth Velocities in Pulsed Laser Heated Silicon

Published online by Cambridge University Press:  22 February 2011

Philip H. Bucksbaum  and
Jeffrey Bokor
Philip H. Bucksbaum
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
Jeffrey Bokor
Affiliation:
AT&T Bell Laboratories, Hoimoel, New Jersey 07733
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Abstract

Direct measurements of the liquid/solid interface veiocity have been made during both melt-in and regrowth for puised (20 psec) ultraviolet lasei irradiation or crystailine silicon. The regrowth velocity was 25 m/sec, independent or laser fluence. Regrowtn velocities of 50 to 100 m/sec are expected from heat diffusion calculations which neglect undercooling, whereas the inclusion of an appropriate undercooling curve brings the calculation into good agreement with the data. Tne liquid films produced were up to 40 nm thick and were fully amorphized on resoliaificaion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 93
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Wyatt, R. and Cotter, D., Optics Communications 32, 481 (1980).Google Scholar
1a.Hanna, D.C., Yuratich, M.A., and Cotter, D., Nonlinear Optics of Free Atoms and Molecules, Springer Series in Chemical Physics vol.6, p.101, (Springer, New York, 1979).Google Scholar
1b.Neuffer, R.V. and Commins, E.D., Phys. Rev. A 16, 844, (1977)Google Scholar
2.Shvarev, K. M., Baum, B. A., and Geld, P. V., Soy. Phys.Solid State 16, 2111 (1975).Google Scholar
3. See, for example, Born, M. and Wolf, E., Principles of Optics, 6th Edition, (Pergamon Press, Oxford, 1980), pp.628–632.Google Scholar
4.Surko, C.M., Simons, A.L., Auston, D.H., Golovchenko, J.A., Slusher, R.E., and Venkatesan, T.N.C., Appl. Phys. Lett. 34, 635, (1979);Google Scholar
4a.Baeri, P., Campisano, S.U., Foti, G. and Rimini, E., J. Appl. Phys. 50, 788 (1979);Google Scholar
4b.Wood, R.F. and Giles, G.E., Phys. Rev. B 23, 2923 (1981).Google Scholar
5.Thompson, M.O. and Galvin, G.J., in Laser-Solid Interactions and Transient Thermal Processing of Materials, Narayan, J., Brown, W.L., and Lemons, R.A., eds. (North-Holland, New York, 1982), p. 57.Google Scholar
5a.Thompson, M.O., Mayer, J.W., Cullis, A.G., Webber, H.C., Chew, N.G., Poate, J.M., and Jacobson, D.C., Phys. Rev. Lett. 50, 896, (1983).Google Scholar
6.Turnbull, D. and Cohen, M. H., “Crystallization Kinetics and Glass Formation,” in Modern Aspects of the Vitreous State, ed. by MacKenzie, J. D., 1, 38 (1960)Google Scholar
6a.Hillig, W. B. and Turnbull, D., J. Chem. Phys. 24, 914 (1956)Google Scholar
6b.Turnbull, D., J. Phys. Chem. 66, 609 (1962)Google Scholar
6c.Turnbull, D., Journal de Physiq-ue 43, C259 (1982)Google Scholar
7.Aziz, M. J., J. Appl. Phys. 53 (2), 1158 (1982).Google Scholar
8.Donovan, E. P., Spaepen, F., Turnbull, D., Poate, J. M., and Jacobson, D. C., Appl. Phys. Lett. 42, 698(1983).Google Scholar
9.Thompson, M., private communication.Google Scholar