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The Measurement of Silicide Schottky Barrier Heights by Use of Photovoltaic Techniques

Published online by Cambridge University Press:  22 February 2011

T.F. Kuech ,
C.S. Wu  and
S.S. Lau
T.F. Kuech
Affiliation:
IBM T.J.Watson Research Center, P.O. Box 218, Yorktown Heights, NY, 10598,
C.S. Wu
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California-San Diego, La Jolla, CA, 92093
S.S. Lau
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California-San Diego, La Jolla, CA, 92093
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Abstract

Schottky barrier structures often exhibit forward bias current voltage characteristics possessing a marked deviation from ideal behavior. In many cases, this deviation can be attributed to the influence of an appreciable series resistance on the diode characteristic making the determination of the actual Schottky barrier height from this characteristic difficult. In a study of rare earth silicides on Si, the present authors have successfully employed an alternative technique which overcomes this series resistance effect. This technique is derived from the conventional methods for obtaining barrier height and series resistance values in photovoltaic devices, although not necessarily requiring transparent metallizations. Photogenerated current from the device periphery is utilized here in the determination of the barrier height. The measurement of both open circuit voltage and the short circuit current at varying illumination intensities allows the junction characteristic to be determined essentially free from series resistance effects. A comparison will be made between the values of the barrier height derived from conventional J-V and photoresponse measurements, with photovoltaic measurements made on structures possessing either a semi-transparent or opaque metallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 663
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Norde, H., J.Appl.Phys. 50, 5052 (1979).Google Scholar
2. Hwang, H.-C.W., Alliotta, C.F., and Ho, P.S., Appl.Phys.Lett. 54, 51(1982).Google Scholar
3. Rhoderick, E.H., Metal-Semiconductor Contacts (Clarendon Press, Oxford 1978), p. 48.Google Scholar
4. Hovel, H.J., Solar Cells in:Semiconductors and Semimetals V. 11, Willardson, R.K. and Beer, A.C. (Academic Press, New York 1975).Google Scholar
5. op.cit. Rhoderick, E.H., p.7.Google Scholar
6. Holloway, H. and Brailsford, A.D., J.Appl.Phys. 54, 4641(1983).CrossRefGoogle Scholar
7. Lau, S.S., Pai, C.S., Wu, C.S., Kuech, T.F., and Liu, B.X., Appl. Phys. Lett. 41, 77(1982).Google Scholar
8. Wu, C.S., Lau, S.S., Kuech, T.F., and Liu, B.X., Thin Solid Films 104, 175(1983).Google Scholar
9. Sze, S.M., Physics of Semiconductor Devices (J.W.Wiley and Sons, New York, (1969), p. 397.Google Scholar