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Measurement of Residual Stress in ZnO Thin Films Deposited on Silicon Wafers by the Indentation Fracture Test

Published online by Cambridge University Press:  01 February 2011

Tong-Yi Zhang  and
Bin Huang
Tong-Yi Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Bin Huang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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Abstrct:

The indentation fracture test was used to evaluate residual stress in ZnO thin films deposited on silicon wafers. Using the calibrated constants involved in a simple semi-empirical formula, which was developed based on fracture analysis and experimental results, we estimated the residual stress in the ZnO thin films by measuring the indentation-induced crack length as a function of the indentation load.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U3.3
Copyright
Copyright © Materials Research Society 2004

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References

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