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Measurement of Intrinsic Stress in a-Si:H thin films Deposited in a Remote Hydrogen Plasma Reactor

Published online by Cambridge University Press:  21 February 2011

K. S. Stevens  and
N. M. Johnson
K. S. Stevens
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The effects of deposition conditions on the intrinsic stress in a-Si:H films deposited in a remote hydrogen plasma reactor are reported. The intrinsic stress is calculated from the change in substrate curvature induced by the a-Si:H film, as measured by the optical lever technique, and the results are compared with those for rf glow discharge deposited a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 715
Copyright
Copyright © Materials Research Society 1991

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References

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