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Measurement of Arsenic Emission from Doped Czochralski Silicon Crystal Growing Operation

Published online by Cambridge University Press:  10 February 2011

D. Sinha ,
C. Carlson ,
Andy Homyak  and
Elias Hunter
D. Sinha
Affiliation:
HunterMitsubishi Silicon America (formerly Siltec Corporation), P.O. Box 7748, Salem, OR 97303.
C. Carlson
Affiliation:
Air Products and Chemicals, 19955 S.W. Teton Avenue, Tualatin, OR 97062.
Andy Homyak
Affiliation:
Air Products and Chemicals, 7201 Hamilton Blvd, Allentown, PA. 18195
Elias Hunter
Affiliation:
Air Products and Chemicals, 7201 Hamilton Blvd, Allentown, PA. 18195
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Abstract

The level of arsenic from the effluent of a crystal grower was measured at different phases of the silicon crystal growth operation which includes arsenic doping, crystal body growth, burn‐in, and post burn‐in periods. Measurement of arsenic levels were made in the discharge water used as the sealing liquid for the liquid ring vacuum pump used for process effluent discharge. Gas phase measurements were also performed for both particulate arsenic as As2O3 as well as for compounds of arsenic in vapor phase as AsH3. Results of these analyses provided important information for developing strategy for emission treatment and control, reducing arsenic exposure to personnel and evaluating the feasibility for recycling argon used in the crystal growing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 447: Symposium L – Environmental, Safety, and Health Issues in IC Pro…… , 1996 , 107
Copyright
Copyright © Materials Research Society 1997

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