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Measurement and Analysis of Structural Damping in Silicon Carbide Microresonators

Published online by Cambridge University Press:  01 February 2011

Sairam Prabhakar ,
Frederic Nabki ,
Mourad El-Gamal  and
Srikar Vengallatore
Sairam Prabhakar
Affiliation:
[email protected], McGill University, Mechanical Engineering, Montreal, Canada
Frederic Nabki
Affiliation:
[email protected], McGill University, Electrical and Computer Engineering, Montreal, Canada
Mourad El-Gamal
Affiliation:
[email protected], McGill University, Electrical and Computer Engineering, Montreal, Canada
Srikar Vengallatore
Affiliation:
[email protected], McGill University, Mechanical Engineering, Montreal, Canada
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Abstract

The design of microresonators with high natural frequencies (1 MHz to 1 GHz) and low structural damping is essential for devices used for applications in communications. Here, we report experimental measurements of damping at low pressure and ambient temperature in electrostatically-actuated, metallized silicon carbide microresonators. Comparison of the measured values with the predictions of a model for thermoelastic damping indicates that the contribution of this mechanism to the measured damping ranges from 10% to 50% over a broad frequency range (3 MHz to 30 MHz).

Keywords

internal frictionmicroelectro-mechanical (MEMS)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1139: Symposium GG – Microelectromechanical Systems–Materials and Devices II , 2008 , 1139-GG03-04
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

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