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MBE Growth of IV-VI Nanowires on a Self-organized Template

Published online by Cambridge University Press:  01 February 2011

Lee Andrew Elizondo
Affiliation:
[email protected]@yahoo.com, Raytheon Vision Systems, Goleta, California, United States
Patrick McCann
Affiliation:
[email protected], University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma, United States
Joel Keay
Affiliation:
[email protected], University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma, United States
Matthew Johnson
Affiliation:
[email protected], University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma, United States
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Abstract

We present the experimental results for the first known molecular beam epitaxy (MBE) growth of quasi-one-dimensional PbSe wires on technologically relevant silicon.In this work, we describe the growth and characterization of low-dimensional IV-VI semiconductors as they evolve from one-dimensional dot/dot-chains to one-dimensional structures on a self-organized template epitaxially grown on Si(110). In situ and ex situ characterization were performed at various stages throughout growth by reflection high energy electron diffraction, scanning electron microscopy, and non-contact atomic force microscopy. Initial growths resulted in some preferential alignment of the PbSe dot-chains parallel to the self-organized template in the [-110] direction. By reducing the substrate temperature and increasing the supplemental Se flux, the morphology of dot-chains extend into lengthened one-dimensional structures. This is an important milestone in the fabrication of PbSe quantum wires on technologically relevant silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1. Murray, B. C. Sun, S., Glaschler, W., Doyle, H., Betley, A. T. and Kagan, R. C. IBM J. Res. Dev. 45, 47 (2001).Google Scholar
2. Pietryga, M. J. Schaller, D. R. Werder, D., Stewart, H. M. Klimov, I. V. and Hollingsworth, A. J., J. Am. Chem. Soc. 126, 11752 (2004).Google Scholar
3. Sargent, E. H. Adv. Mater. 17, 515 (2005).Google Scholar
4. Wu, Z., Mi, Z., Bhattacharya, P., Zhu, T., and Xu, J., Appl. Phys. Lett. 90, 171105 (2007).Google Scholar
5. Xu, T. N. Wu, H. Z. Si, J. X. and McCann, P. J. Phys. Rev. B 76, 155328 (2007).Google Scholar
6. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).Google Scholar
7. Liu, W. K. Fang, X. M. and McCann, P. J. Appl. Phys. Lett. 67, 1695 (1995).Google Scholar
8. Liu, W. K. Fang, X. M. Yaun, Wei-Li, Santos, M. B. Chatterjee, T., McCann, P. J. and O'Rear, E. A., J. Cryst. Growth 167, 111 (1996).Google Scholar
9. Harbold, J. M. and Wise, F. W. Phys. Rev. B 76, 125304 (2007).Google Scholar