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MBE Growth of GaAs on Si: Problems and Progress

Published online by Cambridge University Press:  25 February 2011

Herbert Kroemer
Herbert Kroemer*
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

Several fundamental problems are reviewed that must be solved if GaAs on Si growth is to be achieved with device-quality already close to the GaAs/Si interface, rather than relying on thick buffer layers: (a) antiphase disorder, (b) interface charge and cross-doping, and (c) misfit dislocations. An extensive discussion is given of the mechanism by which antiphase disorder is suppressed on (100)-oriented substrates

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 3
Copyright
Copyright © Materials Research Society 1986

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References

1. Windhorn, T. H. and Metze, G. M., Appl. Phys. Lett. 47,1031 (1985).CrossRefGoogle Scholar
2. See, for example, Fischer, R. J., Chand, N. C., Knopp, W. F., Peng, C.-K., Morkoc, H., Gleason, K. R., and Scheitlin, D., IEEE Trans. Electron Dev., ED-33, 206 (1986).CrossRefGoogle Scholar
3. Wright, S. L. and Kroemer, H., Appl. Phys. Lett. 36, 210 (1980).CrossRefGoogle Scholar
4. Ishizaka, A., Nakagawa, K., and Shiraki, Y., Collected papers, Proc. 2nd Int. Symp. MBE/CST, Tokyo 1982, Japan Soc. Appl. Phys., pp. 183 ff.Google Scholar
5. Sakai, S., Soga, T., Takeyasu, M., and Umeno, M., these Proceedings.Google Scholar
6. Otsuka, N., Choi, C., Kolodziejski, L. A., Gunshor, R. L., Nakamura, Y., Nakagura, S., Fischer, R., Peng, C. K., and Morkoc, H., 13th. Ann. Conf. Phys. Chem. Semicond. Interfaces (PCSI), Pasadena, Jan. 1986, Paper #TUA-8, to be published.Google Scholar
7. Wright, S. L., Inada, M., and Kroemer, H., J. Vac. Sci. Technol. 21,534 (1982).CrossRefGoogle Scholar
8. Wright, S. L., Kroemer, H., and Inada, M., J. Appl. Phys. 55, 2916 (1984).CrossRefGoogle Scholar
9. Uppal, P. N. and Kroemer, H., J. Appl. Phys. 58, 2195 (1985).CrossRefGoogle Scholar
10. Harrison, W. A., Kraut, E. A., Waldrop, J. R., and Grant, R. W., Phys. Rev. B 18, 4402 (1978).CrossRefGoogle Scholar
11. Kroemer, H., Surf. Sci. 123, 543 (1983).CrossRefGoogle Scholar
12. Henzler, M. and Clabes, J., Proc. 2nd Int. Conf. Solid Surfaces, in: Jpn. J. Appl. Phys. Suppl. 2, Pt.2,389 (1974).Google Scholar
13. Kaplan, R., Surf. Sci. 93, 145 (1980).CrossRefGoogle Scholar
14. For extensive references see Uppal and Kroemer, ref. [9.Google Scholar
15. Fischer, R. J., Chand, N. C., Knopp, W. F., Morkoc, H., Erickson, L. P., and Youngman, R., Appl. Phys. Lett. 47, 397 (1985)CrossRefGoogle Scholar
16. Nishi, S., Inomata, H., Akiyama, M., and Kaminishi, K., Jpn. J. Appl. Phys. 24, L391 (1985).CrossRefGoogle Scholar
17. Akiyama, M., Kawarada, Y., and Kaminishi, K., Jpn. J. Appl. Phys. 23, L843 (1984).CrossRefGoogle Scholar
18. Wang, W. I., Appl. Phys. Lett. 44, 1149 (1984).CrossRefGoogle Scholar
19. Sakamoto, T. and Hashiguchi, G., Jpn. J. Appl. Phys. 25, L57 (1986).Google Scholar
20. Kroemer, H., Polasko, K. J., and Wright, S. L., Appl. Phys. Lett. 36, 763 (1980).CrossRefGoogle Scholar
21. Liu, T.-Y. and Kroemer, H., unpublished.Google Scholar