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MBE Growth and Characterization of InSb/AlxIn1−xSb Strained Layer Structures

Published online by Cambridge University Press:  10 February 2011

K. J. Goldammer ,
W. K. Liu ,
W. Ma ,
M. B. Santos ,
R. J. Hauenstein  and
M. L. O'steen
K. J. Goldammer
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019, [email protected]
W. K. Liu
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019, [email protected]
W. Ma
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019, [email protected]
M. B. Santos
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019, [email protected]
R. J. Hauenstein
Affiliation:
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
M. L. O'steen
Affiliation:
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
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Abstract

Three types of structures were fabricated using molecular beam epitaxy. High-resolution x-ray diffraction measurements demonstrated the high structural quality of InSb/AlxIn1−xSb superlattices grown on InSb and GaAs substrates. Hall effect data revealed the effect of substrate temperature on autocompensation in InSb δ-doped with Si. Two-dimensional electron systems with a high mobility were realized in InSb quantum wells with AlxIn1−xSb barriers δ-doped with Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 97
Copyright
Copyright © Materials Research Society 1997

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References

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