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Materials Issues in the Development of High Data-Transfer-Rate Phase-Change Compounds

Published online by Cambridge University Press:  21 March 2011

Martijn H.R. Lankhorst
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656AA, Eindhoven, The Netherlands, ([email protected])
Herman J. Borg
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656AA, Eindhoven, The Netherlands
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Abstract

A model is presented to calculate glass-transition temperatures. This model in combination with experimental data is used to evaluate archival-life stability of common phase change materials Ge2Sb2Te5 and doped eutectic Sb2Te compositions.

On the basis of this model, novel high-data-rate phase change compositions have been identified near and on the pseudo-binary line InSb-GaSb in the ternary system Ga-In-Sb.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1]Lankhorst, M.H.R., ‘Modeling of glass transition temperatures of phase-change materials for optical recording’, submitted to J. Non-Cryst.Solids, (2001)Google Scholar
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