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Materials Compatibility Between Si/Sio2 Substrates and Batio3 Thin Films

Published online by Cambridge University Press:  15 February 2011

J. V. Caballero ,
V. M. Fuenzalida ,
R. Ávila  and
I. Eisele
J. V. Caballero
Affiliation:
Universidad de Chile, FCFM, Casilla 487-3, Santiago, Chile, [email protected]
V. M. Fuenzalida
Affiliation:
Universidad de Chile, FCFM, Casilla 487-3, Santiago, Chile, [email protected]
R. Ávila
Affiliation:
Comisión Chilena de Energía Nuclear, Casilla 188-D, Santiago, Chile.
I. Eisele
Affiliation:
Universität der Bundeswehr, W.Heisenberg Weg 39, D85577 Neubiberg, Germany
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Abstract

BaTiO3 thin films, 50–60 nm in thickness, were evaporated in Ultra High Vacuum as well as under 1 mPa O2 pressure onto Si/SiO2 (30 nm) wafers. The substrate temperature during the evaporations was approximately 70 °C. The films were flash annealed in oxygen at 500 °C. The interfacial reactions were studied by XPS and AES Ar ion assisted depth profiling, and by RBS. Interdiffusion took place even at 70 °C. The XPS/AES depth profiles suggested strong interdiffusion, with Ba being the dominant moving species. The SiO2/BaTiO3 interface smears out with significant Ba concentrations up to half of the SiO2 thickness. Ti diffusion is remarkably lower. Barium is detected up to the SiO2/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 189
Copyright
Copyright © Materials Research Society 1996

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