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Materials Analysis with X-Ray Rocking Curves

Published online by Cambridge University Press:  25 February 2011

Bruce M. Paine
Bruce M. Paine*
Affiliation:
Electrical Engineering 116-81, California Institute of Technology, Pasadena CA 91125
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Abstract

We review the technique of x-ray double crystal diffractometry as applied to measurement of microscopic profiles of strain in semiconductor materials. The first step in this technique is the extraction of average strains and layer thicknesses directly from the x-ray rocking curves. Profiles of strains with depth are then found by iterative fitting of the experimental rocking curves with trial distributions, incorporated into a theoretical model for the diffraction. The kinematic approximation is accurate for thicknesses up to 1μm in most semiconductors. For greater thicknesses, the more precise dynamical model must be applied.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 39
Copyright
Copyright © Materials Research Society 1986

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