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Material Aspects of Reactively MF-Sputtered Zinc Oxide for TCO Application in Silicon Thin Film Solar Cells

Published online by Cambridge University Press:  01 February 2011

Jürgen Hüpkes
Affiliation:
Institute of Photovoltaics (IPV), Forschungszentrum Jülich GmbH, D-52425 Jülich
Bernd Rech
Affiliation:
Institute of Photovoltaics (IPV), Forschungszentrum Jülich GmbH, D-52425 Jülich
Oliver Kluth
Affiliation:
Institute of Photovoltaics (IPV), Forschungszentrum Jülich GmbH, D-52425 Jülich
Joachim Müller
Affiliation:
Institute of Photovoltaics (IPV), Forschungszentrum Jülich GmbH, D-52425 Jülich
Hilde Siekmann
Affiliation:
Institute of Photovoltaics (IPV), Forschungszentrum Jülich GmbH, D-52425 Jülich
Chitra Agashe
Affiliation:
Institute of Photovoltaics (IPV), Forschungszentrum Jülich GmbH, D-52425 Jülich
Hans P. Bochem
Affiliation:
Institute of Thin Films and Interfaces (ISG), Forschungszentrum Jülich GmbH, D-52425 Jülich
Matthias Wuttig
Affiliation:
Institute for Physics of New Materials - Department of Physics, RWTH, D-52056 Aachen
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Abstract

Al-doped ZnO films were deposited on glass in an in-line system by reactive mid-frequency (MF) magnetron sputtering. The influence of substrate position on the film properties as well as the relation between static and dynamic deposition are studied. All films showed low resistivity (<4x10-4 Ωcm) and excellent transparency (> 80 % in the visible region). The resistivity ρ for substrate positions above the sputter craters (race tracks) is up to a factor of two higher than on other positions where the smallest ρ is 1.9 x 10-4 Ωcm. Major differences in statically deposited films as a function of the position on the substrate are found for the structural film properties as characterized by x-ray diffraction (XRD) and etching behaviour. The different surface textures obtained after etching are directly related to variations in the short-circuit current densities of amorphous silicon p-i-n solar cells prepared on these etched ZnO:Al films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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