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Material and Electrical Characterization of HfO2 Films for MIM Capacitors Application

Published online by Cambridge University Press:  01 February 2011

Hang Hu ,
Chunxiang Zhu ,
Y. F. Lu ,
Y. H. Wu ,
T. Liew ,
M. F. Li ,
B.J. Cho ,
W. K. Choi  and
N. Yakovlev
Hang Hu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
Chunxiang Zhu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
Y. F. Lu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
Y. H. Wu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
T. Liew
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
M. F. Li
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
B.J. Cho
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
W. K. Choi
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
N. Yakovlev
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Abstract

Thin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 oC shows an overall high performance, such as a high capacitance density of ∼3.0 fF/νm2, a low leakage current of 2x10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.3
Copyright
Copyright © Materials Research Society 2003

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