Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T01:56:30.681Z Has data issue: false hasContentIssue false
  • English
  • Français

A Mass Spectrometric Study of Process Steps of a Tungsten LPCVD Process

Published online by Cambridge University Press:  25 February 2011

T. A. Silvestri ,
G. C. Guzzo ,
D. F. Brestovansky ,
R. J. Markle  and
R. Barber
T. A. Silvestri
Affiliation:
Union Carbide Industrial Gases Inc., Old Saw Mill River Rd, Tarrytown, NY 10591
G. C. Guzzo
Affiliation:
Union Carbide Industrial Gases Inc., Old Saw Mill River Rd, Tarrytown, NY 10591
D. F. Brestovansky
Affiliation:
Union Carbide Industrial Gases Inc., Old Saw Mill River Rd, Tarrytown, NY 10591
R. J. Markle
Affiliation:
SEMATECH Inc., 2706 Montopolis Drive, Austin, TX 78741
R. Barber
Affiliation:
National Semiconductor Corporation Inc., 2900 Semiconductor Drive, Santa Clara, CA 95052
Get access

Abstract

The study of the wafer atmosphere during processing has become a key practice in understanding interactions of the process gases with the wafer, internal chamber surfaces and other process gases. For today's ULSI fabrication, Low Pressure Chemical Vapor Deposition (LPCVD) of tungsten has become common for sub-micron contact and via filling and was the chosen process for this investigation. The wafer atmosphere during key process steps of the tungsten LPCVD process has been characterized by mass spectrometry. During the tungsten LPCVD process studied, the TiN surface was first conditioned for tungsten deposition by generating active nucleation sites. This is followed by the actual deposition. After the deposition, wafer backside etch with NF3 plasma, wafer removal and an in situ chamber clean with NF3 and H2 plasmas performed. This paper discusses the mass spectral analysis of the tungsten LPCVD process during the nucleation, backside etch and in situ chamber clean process steps. Additionally, this paper describes benefits of in situ gas analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 85
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] yu, M. L., Ahn, K. Y., and Joshi, R. V., Surface Reactions in the Chemical Vapor Deposition of Tungsten on Al. PtSi. and TiN Using WF6 and SiH4 , edited by Wong, S.S. and Surukawa, S., Proceedings of the 1990 Tungsten and Other Advanced Metals for VLSI/ULSI Applications V, (Mater. Res. Soc. Proc, Pittsburgh, PA, 1990) pp. 15–21.Google Scholar
[2] Perrin, J., Meot, J., Siefert, J., and Schmitt, J., Mass Spectrometric Study of NFI Plasma Etching of Silicon (Plasma Chem. and Plasma Proc), 10 (4), 1990, pp. 571–587.Google Scholar
[3] Guzzo, G., Brestovansky, D., Bilodeau, D., Watts, J., Kerbaugh, M., Investigation of Contamination Sources and Process Chemistries in a Cluster Tool Silicon Etch Chamber, Submitted for Pub. for the Proc of the I.E.S. Tech. Meeting, Nashville, TN, May 1992.Google Scholar
[4] Silvestri, T., Guzzo, G., Barber, R., and Dharmadhikari, V., In Situ Characterization of a Single Wafer CVP Tungsten System, edited by Rana, V. V. S., Joshi, R. V. and Ohdomari, I. (Proceedings of the 1991 Advanced Metallization for ULSI Applications Conference, Mater. Res. Soc. Proc 1992.) pp. 167–172.Google Scholar