Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:28:49.018Z Has data issue: false hasContentIssue false
  • English
  • Français

Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire

Published online by Cambridge University Press:  10 February 2011

P. Fini ,
H. Marchand ,
J. P. Ibbetson ,
B. Moran ,
L. Zhao ,
S. P. Denbaars ,
J. S. Speck  and
U. K. Mishra
P. Fini
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
H. Marchand
Affiliation:
ECE Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
J. P. Ibbetson
Affiliation:
ECE Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
B. Moran
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
L. Zhao
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
S. P. Denbaars
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
J. S. Speck
Affiliation:
Materials Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
ECE Dept., Univ. of California, Santa Barbara; Santa Barbara, CA 93106
Get access

Abstract

We demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed 'maskless' LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 μm) GaN layer on sapphire is selectively dry etched, leaving ∼5 μm-wide stripe mesas oriented in the <1010>GaN direction, with a 20 μm period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a ‘T’, or overhang, morphology. As for LEO over an SiO2 mask, significant defect reduction (from ∼109 cm−2 to ∼106 cm−2 ) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle (∼0.4 – 0.5°) is relatively independent of growth temperature and wing aspect ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 315
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Usui, A., Sunakawa, H., Sakai, A., and Yamaguchi, A. A., Jpn. J. Appl. Phys., Pt. 2 36 (7B), L899–902 (1997).10.1143/JJAP.36.L899Google Scholar
2. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 71 (16), 2259–61 (1997).10.1063/1.120044Google Scholar
3. Kimura, A., Sasaoka, C., Sakai, A., and Usui, A., presented at MRS Nitride Semicond. Symp., Boston, MA, USA, 1997 (unpublished).Google Scholar
4. Marchand, H., Ibbetson, J.P., Fini, P., Kozodoy, P., Keller, S., Speck, J.S., DenBaars, S.P., and Mishra, U.K., MRS Internet J. Nitride Semicond. Res. 3 (3) (1998).10.1557/S1092578300000752Google Scholar
5. Marchand, H., Zhang, N., Zhao, L., Golan, Y., Fini, P., Ibbetson, J.P., Keller, S., DenBaars, S.P., I Speck, S., and Mishra, U.K., presented at 25th Int. Symp. Comp. Semicond., Nara, Japan, 1998 (unpublished).Google Scholar
6. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 73 (4), 481–3 (1998).10.1063/1.121907Google Scholar
7. Marchand, H., Ibbetson, J.P., Fini, P., Chichibu, S., Rosner, S.J., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K., presented at 25th Int. Symp. Comp. Semicond., Nara, Japan, 1998 (unpublished).Google Scholar
8. Marchand, H., Ibbetson, J.P., Fini, P., Wu, X.H., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K., MRS Internet J. Nitride Semicond. Res. G 4.5 (G4.5) (1998).10.1557/S1092578300000582Google Scholar
9. Zheleva, T. S., Ok-Hyun, Nam, Bremser, M. D., and Davis, R. F., Appl. Phys. Lett. 71 (17), 2472–4 (1997).10.1063/1.120091Google Scholar
10. Nam, Ok-Hyun, Bremser, M. D., Zheleva, T. S., and Davis, R. F., Applied Physics Letters 71 (18), 2638–40 (1997).10.1063/1.120164Google Scholar
11. Freitas, J. A. Jr, Nam, O.-H., Zheleva, T. S., and Davis, R. F., J. Cryst. Growth 189–190, 92–6 (1998).10.1016/S0022-0248(98)00179-1Google Scholar
12. Nakamura, S., Senoh, M., Nagahama, S. I., lwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., J. Cryst. Growth 189/190, 820–5 (1998).10.1016/S0022-0248(98)00302-9Google Scholar
13. Nakamura, S., Senoh, M., Nagahama, S., lwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Uimemoto, H., Sang, M., and Chocho, K., Japn. J. Appl. Phys. Lett. 37 (3B), L309–12 (1998).10.1143/JJAP.37.L309Google Scholar
14. Nakamura, S., Senoh, M., Nagahama, S. I., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Appl. Phys. Lett. 72 (2), 211–13 (1998).10.1063/1.120688Google Scholar
15. Mukai, T., Takekawa, K., and Nakamura, S., Jpn. J. Appl. Phys. 37 (7B), L839–41 (1998).Google Scholar
16. Sasaoka, C., Sunakawa, H., Kimura, A., Nido, M., Usui, A., and Sakai, A., J. Cryst. Growth 189/190, 61–6 (1998).10.1016/S0022-0248(98)00169-9Google Scholar
17. Kozodoy, P., Ibbetson, J.P., Marchand, H., Fini, P.T., Keller, S., Speck, J.S., DenBaars, S.P., and Mishra, U.K., Appl. Phys. Lett. 73 (7), 975–7 (1998).10.1063/1.122057Google Scholar
18. Vetury, R., Marchand, H., Ibbetson, J.P., Fini, P., Keller, S., Speck, J.S., Denbaars, S.P., and Mishra, U.K., presented at 25th Int. Symp. on Compound Semicond., Nara, Japan, 1998 (unpublished).Google Scholar
19. Parish, G., Keller, S., Kozodoy, P., Ibbetson, J.P., Marchand, H., Fini, P., Fleischer, S.B., DenBaars, S.P., and Mishra, U.K., presented at 1998 Conference on Optoelectronic and Microelectronic Materials And Devices, University of Western Australia, Perth, Australia, 1998 (unpublished).Google Scholar
20. Gehrke, T., Linthicum, K.J., Thomson, D.B., Rajagopal, P., Batchelor, A.D., and Davis, R.F., MRS Internet J. Nitride Semicond. Res. 4S1, G3.2 (1999).10.1557/S1092578300002337Google Scholar
21. Wu, X. H., Fini, P., Keller, S., Tarsa, E. J., Heying, B., Mishra, U. K., DenBaars, S. P., and Speck, J. S., Japn. J. Appl. Phys. 35 (12B), L1648 (1996).10.1143/JJAP.35.L1648Google Scholar
22. Marchand, H., Ibbetson, J.P., Fini, P.T., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K., J. Cryst. Growth 195, 328–332 (1998).10.1016/S0022-0248(98)00591-0Google Scholar
23. Fini, P., lbbetson, J.P., Marchand, H., Zhao, L., DenBaars, S.P., and Speck, J.S., unpublished (1999).Google Scholar