Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T18:50:49.465Z Has data issue: false hasContentIssue false
  • English
  • Français

Mapping of Large Area Cadmium Zinc Telluride (CZT) Wafers: Apparatus and Methods

Published online by Cambridge University Press:  10 February 2011

B. A. Brunett ,
J. M. Van Scyoc ,
H. Yoon ,
T. S. Gilbert ,
T. E. Schlesinger ,
J. C. Lund  and
R. B. James
B. A. Brunett
Affiliation:
Sandia National Laboratories, Livermore CA, 94550 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213
J. M. Van Scyoc
Affiliation:
Sandia National Laboratories, Livermore CA, 94550 MSE Department, University of California, Los Angeles, CA 90095
H. Yoon
Affiliation:
MSE Department, University of California, Los Angeles, CA 90095
T. S. Gilbert
Affiliation:
MSE Department, University of California, Los Angeles, CA 90095
T. E. Schlesinger
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213
J. C. Lund
Affiliation:
Sandia National Laboratories, Livermore CA, 94550
R. B. James
Affiliation:
Sandia National Laboratories, Livermore CA, 94550
Get access

Abstract

Cadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and γ-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, we discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm × 10 cm). The data acquisition and manipulation will be discussed and some typical data will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 253
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ramo, S., Currents Induced by Electron Motion, Proc. IRE, 27, p. 584, (1939).Google Scholar
2. Hecht, K., Zum Mechanismus des lichtelektrischen Primärstromes in isolierenden Kristallen, Z. Physik, 77, p. 235, (1932).Google Scholar
3. Bertolini, G., Pulse Shape and Time Resolution, p. 243, in Semiconductor Detectors, ed. by Bertolini, G. and Coche, A., Wiley Interscience, (1968).Google Scholar