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Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Kyung-Bae Park ,
Ji-Sim Jung ,
Jong-Man Kim ,
Myung-kwan Ryu ,
Sang-Yoon Lee  and
Jang-Yeon Kwon
Kyung-Bae Park
Affiliation:
[email protected], R & D reseracher, Display Lab, Samsung advanced Institute of technology Mt.14-1 Nongseo-Dong GiHeung-Gu YongIn-Si GyungGi-Do, YongIn-Si, 446-712, Korea, Republic of
Ji-Sim Jung
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Lab, Mt14-1, Nongseo-dong, Giheung-Gu, Gyeonggi-Do, Yongin-Si, 446-712, Korea, Republic of
Jong-Man Kim
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Lab, Mt14-1, Nongseo-dong, Giheung-Gu, Gyeonggi-Do, Yongin-Si, 446-712, Korea, Republic of
Myung-kwan Ryu
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Lab, Mt14-1, Nongseo-dong, Giheung-Gu, Gyeonggi-Do, Yongin-Si, 446-712, Korea, Republic of
Sang-Yoon Lee
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Lab, Mt14-1, Nongseo-dong, Giheung-Gu, Gyeonggi-Do, Yongin-Si, 446-712, Korea, Republic of
Jang-Yeon Kwon
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Lab, Mt14-1, Nongseo-dong, Giheung-Gu, Gyeonggi-Do, Yongin-Si, 446-712, Korea, Republic of
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Abstract

Microcrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4. Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350oC. The deposition rate in films was as high as 10Å/sec. This process produced ¥ìc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.

Keywords

Simicrostructurethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A17-02
Copyright
Copyright © Materials Research Society 2007

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References

1 Joubert, P., Loisel, B., Chouan, Y., and Haji, L., J. Electrochem. Soc. 134, 2541 (1987)Google Scholar
2 Vepřek, S. and Marecek, V., Solid State Electronics, 11, 683 (1968).Google Scholar
3 French, I.D., Deane, S.C., Cabarrocas, P. Roca i, IDW'O1, Korea, 367–370, (2001)Google Scholar
4 Demichelis, F., Crovini, G., Giorgis, F., Pirri, C.F. and Tresso, E., J. App. Phys. 79, 1730, (1996)Google Scholar
5 Tsai, C. C., in: Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1989), Vol. A, p. 123.Google Scholar
6 Solomon, I., Shirai, H., and Layadi, N., J. Non Cryst. Solids 164–166, 989 (1993).Google Scholar
7 Matsuda, A., Thin Solid Films, 337, 1 (1999).Google Scholar
8 Gerbi, J. E. and Abelson, J. R., J. Appl. Phys. 89, 1463 (2001).Google Scholar
9 Hamma, S., Colliquet, D., and Cabarrocas, P. Roca i,. MRS Symp. Proc. Series, Vol. 507, 505 (1998).Google Scholar
10 Koh, J., Ferlauto, A. S., Rovira, P. I., Wronski, C. R., and Collins, R. W., Appl. Phys. Lett. 75, 2286 (1999)Google Scholar
11 Morral, A. Fontcuberta i and Cabarrocas, P. Roca i, Thin Solid Films 383, 161 (2001).Google Scholar
12 Jung, J. S., Kwon, J. Y., Park, Y. S., Cho, H. S., Park, K. B., Huaxiang, Y. X., Xianyu, W. X. and Noguchi, T., J. Korean Phys. Soc., 45, S861 (2004)Google Scholar