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Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

Published online by Cambridge University Press:  31 January 2011

Neeraj Nepal ,
M. Oliver Luen ,
Pavel Frajtag ,
John Zavada ,
Salah M. Bedair  and
Nadia El-Masry
Neeraj Nepal
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, C/OMaterials Science and Engineering, 911 Partners Way, Raleigh, North Carolina, 27695, United States, 9195153072, (919)515-7724
M. Oliver Luen
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, 911 Partners Way, Engineering Building 1, Raleigh, North Carolina, 27695-7907, United States, 919-515-3072
Pavel Frajtag
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina, United States
John Zavada
Affiliation:
[email protected], United States
Salah M. Bedair
Affiliation:
[email protected], United States
Nadia El-Masry
Affiliation:
[email protected], United States
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Abstract

We report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

Keywords

ferromagneticspintronicIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1198: Symposium E – Advanced Materials for Half-Metallic and Organic Spintronics , 2009 , 1198-E07-13
Copyright
Copyright © Materials Research Society 2010

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