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Majority Carrier Transport Across Semiconductor Grain Boundaries
Published online by Cambridge University Press: 26 February 2011
Abstract
Majority carrier transport measurements were made across the potential barriers at (100) twist boundaries in silicon. The bicrystals were prepared by hot-pressing single crystals of lightly doped float-zone material, under ultra-high vacuum conditions. The current - voltage measurements were analyzed using combined drift-diffusion and thermionic emission transport mechanisms, and incorporating some inhomogeneity in the charge distribution at the boundary. Evidence has been found for a small, Nd = 3 × 1010 cm−2, density of mono-energetic defect states near midgap, in bicrystals characterized by a variety of misorientation angles. This density is too small to result from the intrinsic structure of the boundary. In addition, no dependence was found on misorientation angle.
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- Copyright © Materials Research Society 1991