Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:16:10.595Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic Properties of Pbl-xGdxTe

Published online by Cambridge University Press:  26 February 2011

M. Gorska ,
J. R. Anderson  and
Z. Golacki
M. Gorska
Affiliation:
Department of Physics and Astronomy, University of Maryland, College Park, Maryland 20742
J. R. Anderson
Affiliation:
Department of Physics and Astronomy, University of Maryland, College Park, Maryland 20742
Z. Golacki
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Get access

Abstract

The magnetization and magnetic susceptibility of Bridgman-grown Pb1-xGdxTe have been measured over a temperature range from 2 to 300 K and in magnetic fields from 0.01 to 50 κOe. The x-values of the crystals ranged from 0.03 to 0.07. The magnetic susceptibility followed a Curie-Weiss behavior, χ = C/(T + θ), with positive θ implying an antiferromagnetic exchange interaction between Gd ions. The magnetic field dependence of the magnetization was fitted to a modified Brillouin function with parameter values that agreed fairly well with those from Curie-Weiss plots. The magnitude of θ was comparable to the value found for Pb1-xMnxTe for similar x values; but since the ion spin is bigger for Gd this suggests that the exchange interaction in Gd-doped PbTe is roughly half the value in Mn-doped PbTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 119
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. For references, see Spalek, J., Lewicki, A., Tarnawski, Z., Furdyna, J.K., Galazka, R.R., and Obuszko, Z., Phys. Rev. B 33, 3407 (1986).Google Scholar
2. Bartkowski, M., Northcott, D.J., Park, J.M., Reddoch, A.H., and Hedgcock, F.T., Solid State Commun. 56, 659 (1985).CrossRefGoogle Scholar
3. Averous, M., Lombos, B.A., Fau, C., llbnouelghazi, E., Tedenac, J.C., Brun, G., and Bartkowski, M.A., Phys. Stat. Sol. (b) 131, 759 (1985).Google Scholar
4. Escorne, M., Mauger, A., Tholence, J.L., and Triboulet, R., Phys. Rev. B29, 6306 (1984).Google Scholar
5. Anderson, J.R. and Gorska, M., Solid State Commun. 52, 601 (1984).Google Scholar
6. Bartkowski, M., Reddoch, A.H., Wiliiams, D.F., Lamarche, O., and Korczack, Z., Solid State Commun. 57, 185 (1986).Google Scholar
7. Anderson, J.R., Gorska, M., Azevedo, L.J., and Venturini, E.L., Phys. Rev. B 33, 4706 (1986).Google Scholar
8. Lykov, S.N. and Chernik, I.A., Fiz. Tekh. Poluprovdn. 14, 1861 (1980) [Sov. Phys. Semicond. 14, 1112 (1980)].Google Scholar
9. Gaj, J.A., Planel, R., and Fishman, G., Solid State Commun. 29, 435 (1979).Google Scholar