Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T15:48:06.030Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic Properties of Co/Pt Multilayers on MgO (100) Substrates

Published online by Cambridge University Press:  15 February 2011

R. Krishnan ,
H. Lassri ,
M. Porte ,
M. Tessier  and
N. K. Flevaris
R. Krishnan
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
H. Lassri
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
M. Porte
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
M. Tessier
Affiliation:
Laboratoire de Magnétisme et Matériaux Magnétiques, C.N.R.S. 92195 Meudon, France
N. K. Flevaris
Affiliation:
Department of Solid State Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece
Get access

Abstract

We have prepared Co/Pt multilayers by evaporation in UHV on MgO (100) substrates kept at various temperatures. Most of the samples were grown on a Pt buffer layer. Magnetic and magneto-optical properties have been studied. The surface anisotropy Ks for MgO substrates is 0.35 erg.cm−2 which is smaller than 0.6 erg.cm−2 obtained for glass substrates. The effect of the growth conditions on Ks is observed only for t(Co)<10 Å where the crossover to Keff>O occurs. Deposition at higher temperature leads to an increase in the coercivity. The magnetization and the anisotropy is practically temperature independent in the range 5 to 295 K. However the coercivity increases sharply below 100K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 232: Symposium T – Magnetic Materials: Microstructure and Properties , 1991 , 91
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[l]. Carcia, P.F., Meinhaldt, A.D., and Suna, A., AppI. Phys. Lett. 47 178 (1985)Google Scholar
[2]. Zeper, W.B., Greidanus, F.J.A., Carcia, P.F., and Fincher, P.R., J. Appil. Phys. 65 4971 (1989)CrossRefGoogle Scholar
[3]. Ochiai, Y., Ilashimoto, S., and Aso, K., Jap. J. Appl. Phys., 28 L 659 (1989)CrossRefGoogle Scholar
[4]. Broeder, F.J.A. den, Kuiper, D., Donkersloot, H.C., and Hoving, W., Appl. Physics. A 49 507 (1989)CrossRefGoogle Scholar
[5]. Lacey, E.T.M., and Grundy, P.J., IEEE Trans. Mag. 26 2356 1991 Google Scholar
[6]. Krishnan, R., Porte, M., and Tessier, M., IEEE Trans. Mag. 26 2727 (1989)CrossRefGoogle Scholar
[7]. Awano, H., Suzuki, Y., Yamazaki, T., and Itoh, A., IEEE Trans. Mag. MAG 26 2742 (1990)CrossRefGoogle Scholar
[8]. Jin, B. Y. and.Ketterson, J.B., Adv. in Phys. 38 189 (1989)Google Scholar
[9]. Hashimoto, S., Ochiai, Y., and Aso, K., J. Appl. Phys. 66 4909 (1989)Google Scholar
[10]. Lee, C.H., Farrow, R.F.C., Lin, C.J., and Marinaro, E.E., Phys. Rev. B 42 11384 (1990)Google Scholar