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Magnetic Nanostructures Produced By Electron Beam Direct Writing

Published online by Cambridge University Press:  15 February 2011

J.P. Wang
Affiliation:
Dept. of Electrical and Computer Engineering, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, MN 55455-0154 Data Storage Institute, DSI building, 5 Engineering Drive 1, Singapore, 117608
Y. Zhao
Affiliation:
Data Storage Institute, DSI building, 5 Engineering Drive 1, Singapore, 117608
T.J. Zhou
Affiliation:
Data Storage Institute, DSI building, 5 Engineering Drive 1, Singapore, 117608
J.T.L. Thong
Affiliation:
Center for IC Failure Analysis and Reliability (CICFAR), Faculty of Engineering, NationalUniversity of Singapore, Singapore
T.C. Chong
Affiliation:
Data Storage Institute, DSI building, 5 Engineering Drive 1, Singapore, 117608
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Abstract

We present a method of direct magnetic patterning of nonmagnetic CoC and CoTaC films by electron irradiation-induced nano-scale phase transition. CoxC1-x (0.4<X<0.8) films were prepared by co-sputtering. The as-deposited films with Co concentration less than 60% are amorphous and non-ferromagnetic. All films become ferromagnetic after annealing. Doping Ta into the CoC films can enhance the segregation of Co and C and therefore reduce the phase transition temperature. It is found that the magnetic properties of annealed (Co60C40)97Ta3 films are much better than that of annealed Co60C40 films at the same annealing condition. Magnetic nano-patterning (dot/line array) of the as-deposited CoC and Co(TaC) films was realized by subjecting them to electron irradiation using a focused 30keV electron beam with a current of 7.1 nA and dwell time per dot of 0.75 to 15.2 seconds. A 250nm magnetic dot/line array was produced by this method. It was also found that the time required to magnetically pattern non-magnetic (Co60C40)97Ta3 thin films (0.75 seconds) is much shorter than that required for Co60C40 films (3.8 seconds). The present method of magnetically patterning a nonmagnetic film has the potential application for nanoscale solid magnetic devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

references

1. Chou, S. Y., Wei, M. S., Krauss, P. R., and Fischer, P. B., J. Appl. Phys. 76, 6637 (1994)Google Scholar
2. Prinz, G. A., J. Magn. Magn. Mater. 200, 57 (1999)Google Scholar
3. Kryder, M. H., Messner, W., and Carley, L. R., J. Appl. Phys. 79, 4485 (1996).Google Scholar
4. Simonds, J. L., Phys. Today 48, 26 (1995)Google Scholar
5. Cowburn, R. P. and Welland, M. E., Science 287, 1466 (2000)Google Scholar
6. Chou, S. Y., Krauss, P. R., and Fischer, P. B., Science 272, 85 (1996)Google Scholar
7. New, R. M. H., Pease, R. F. W., and White, R. L., J. Vac. Sci. Technol. B13, 1089 (1995)Google Scholar
8. Pferffer, H. C., J. Vac. Sci. Technol. 15, 887 (1978)Google Scholar
9. Zhou, T. J., Zhao, Y., Wang, J. P., Chong, T. C., and Thong, J. T. L., IEEE. Trans. Magn. 38, 1970 (2002)Google Scholar
10. Zhao, Y., Zhou, T. J., Wang, J. P., and Chong, T. C., IEEE. Trans. Magn, in press.Google Scholar
11.http://www.webelements.comGoogle Scholar