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Luminescence Properties of Pulsed Laser Deposited Eu:Y2O3 Thin Film Phosphors on Sapphire Substrates

Published online by Cambridge University Press:  15 February 2011

K.G. Cho ,
D. Kumar ,
P. H. Holloway  and
R. K. Singh
K.G. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611Email: [email protected]
D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611Email: [email protected]
P. H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611Email: [email protected]
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611Email: [email protected]
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Abstract

Eu:Y2O3 phosphor films were deposited on (0001) sapphire substrates using 248 nm KrF pulse laser to investigate microstructure-property correlations. A slow film growth (60 nm/min) process results in predominantly (222) orientation while a fast film growth (170 nm/min) process results in predominantly (400) orientation of Eu:Y2O3 film. With an increase in film thickness from 0.6μm to 1.2μm, a 300% increase in brightness has been achieved from Eu:Y2O3 films. An increase in substrate temperature during deposition from 700°C to 800°C resulted in ~40% brighter films. Improvement in brightness from Eu:Y2O3 films with the film thickness may be attributed to an increase in roughness while that from substrate temperature may be attributed to a combined effect of increased roughness and improved crystallinity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 317
Copyright
Copyright © Materials Research Society 1998

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