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Luminescence Properties of New Donors in CZ-Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
We report the observation of a new shallow donor center detected in CZ Silicon annealed at 600°C, by EPR and luminescence experiments. The binding energy varies between 30 meV and 17 meV with the annealing time, showing the presence of several centers. The creation rate of these new defects is favoured in carbon rich material. This series of defects is probably one of the components of the New Donors.
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- Copyright © Materials Research Society 1986