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Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

P. M. Petroff
P. M. Petroff*
Affiliation:
Bell laboratories, Murray Hill, New Jersey 07974 USA
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Abstract

The luminescence properties of undoped GaAs-Ga1−x Alx As layers grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are compared for double heterostructure and multiquantum well (MQW) superlattices. Low temperature cathodoluminescence and scanning transmission electron microscopy are used to identify the main luminescence centers and in some instances establish their origin. The possible effects of the observed luminescence features on the degradation process in GaAs-Gal−x Alx As laser devices grown by MBE and LPE are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 457
Copyright
Copyright © Materials Research Society 1981

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References

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