Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-09T15:52:14.130Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

P. M. Petroff
P. M. Petroff*
Affiliation:
Bell laboratories, Murray Hill, New Jersey 07974 USA
Get access

Abstract

The luminescence properties of undoped GaAs-Ga1−x Alx As layers grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are compared for double heterostructure and multiquantum well (MQW) superlattices. Low temperature cathodoluminescence and scanning transmission electron microscopy are used to identify the main luminescence centers and in some instances establish their origin. The possible effects of the observed luminescence features on the degradation process in GaAs-Gal−x Alx As laser devices grown by MBE and LPE are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 457
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Petroff, P. M. and Hartman, R. L., Appl. Phys. Lett., 23, 1969 (1973) andGoogle Scholar
J. Appl. Phys., 45, 9, 3899 (1974).Google Scholar
2. Hutchinson, P. W., Dobson, P. S., O'Hara, P. and Newman, D. H., Appl. Phys. Lett., 26, 250 (1975).Google Scholar
3. Petroff, P. M. (unpublished results).Google Scholar
4. Hayashi, I., Proceedings of 15th International Conference on the Physics of Semiconductors Kyoto (1980) (to be published).Google Scholar
5. O'Hara, S., Hutchinson, P. W. and Dobson, P. S., Appl. Phys. Lett., 30, 368 (1977).CrossRefGoogle Scholar
6. Hutchinson, P. W. and Dobson, P. S., Phil. Mag., 41, 4, 601 (1980).Google Scholar
7. Dingle, R. in Festkorperprobleme (Advances in Solid State Physics, Ed. Queisser, H. J. (Pergamon/Vieweg. Braunschweig), Vol. 15, p. 21 (1975).Google Scholar
8. Petroff, P. M., Lang, D. V., Strudel, J. L. and Logan, R. A., Scanning Electron Microscopy (SEM Inc. AMF O'Hare, IL 6066 USA), Vol. 1, p. 325 (1978).Google Scholar
9. Petroff, P. M. and Logan, R. A., J. Vac. Sci. Technol., 17, 5, 1113 (1980).Google Scholar
10. Stringfellow, G. B. and Linnebach, R., J. Appl. Phys., 51 (4) 2212 (1980).Google Scholar
11. Ashen, D. J., Dean, P. J., Hurle, D. T. J., Mullin, J. B. and White, A. M., J. Phys. Chem. Solids, 36, 1041 (1975).Google Scholar
12. Pretroff, P. M., Weisbuch, C., Dingle, R., Gossard, A. C. and Wiegmann, W. (to be published).Google Scholar
13. Kunzle, H. and Ploog, K., Appl. Phys. Lett., 37, 416 (1980).Google Scholar
14. Petroff, P. M., Gossard, A. C., Wiegmann, W. and Savage, A., J. Cryst. Growth, 44, 5 (1978)Google Scholar
15. Weisbuch, c. and Dingle, R. (to be published).Google Scholar