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Luminescence of quasi-2DEG in heterostructures based on PbS films

Published online by Cambridge University Press:  21 March 2011

G. Khlyap
G. Khlyap*
Affiliation:
State Pedagogical University, 24 Franko str., Drogobych, 82100, Ukraine.
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Abstract

The paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 μm thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.39.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Andrukhiv, A., Khlyap, G., Andrukhiv, M., Bochkariova, L. Thin Solid Films, 267, 126 (1995)Google Scholar
2. Khlyap, G., Andrukhiv, M. Cryst. Res. Techn., 34, 751 (1999).Google Scholar
3. Hernandez, E. Cryst. Res. Techn., 33, 285 (1998).Google Scholar
4. Kozyrev, S., Shik, A. Semiconductors (Russia), 22, 106 (1988).Google Scholar
5 Sze, S. M., Physics of Semiconductor Devices, Second Edition, John Viley & Sons, New York, 1981.Google Scholar
6. Bleuse, J., Bonnet-Gamard, J., Mula, G., Magnea, N., Pautrat, J.-L. J. Cryst. Growth, 197, 529 (1999)Google Scholar