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Luminescence Of A New Material: GaN Grown On NdGaO3

Published online by Cambridge University Press:  10 February 2011

K. P. Korona ,
K. Pakula ,
A. Wysmolek ,
J. M. Baranowski ,
J. P. Bergman ,
B. Monemar ,
T. Łukasiewicz  and
Z. Łuczyński
K. P. Korona
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
K. Pakula
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
A. Wysmolek
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
J. M. Baranowski
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
J. P. Bergman
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, S -581 83 Linköping, Sweden
B. Monemar
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, S -581 83 Linköping, Sweden
T. Łukasiewicz
Affiliation:
Institute of Electronic Materials Technology, W61czynska 133, 01–919 Warszawa, Poland
Z. Łuczyński
Affiliation:
Institute of Electronic Materials Technology, W61czynska 133, 01–919 Warszawa, Poland
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Abstract

It is shown that heteroepitaxial GaN layers grown on NdGaO3, in spite of a very high conductivity (˜ 10 Ω−1cm−1) have very efficient luminescence properties. It is shown that a high electrical conductivity is caused by contamination of GaN layers with oxygen. Efficient emission due to donor bound excitons (at hv = 3.475 eV), free excitons and free electron – hole recombination have been identified. The total PL emission in the exciton region exceeds the intensity from the homoepitaxial GaN layers. It is argued that a high oxygen concentration eliminates nonradiative channels connected with point defects, leading to efficient radiative recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 725
Copyright
Copyright © Materials Research Society 1998

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References

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