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Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures

Published online by Cambridge University Press:  01 February 2011

Noad A. Shapiro
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, 1 Cyclotron Road, Berkeley, California 94720
Henning Feick
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, 1 Cyclotron Road, Berkeley, California 94720
William Hong
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, 1 Cyclotron Road, Berkeley, California 94720
Nathan F. Gardner
Affiliation:
LumiLeds Lighting, San Jose, California 95131
Werner K. Goetz
Affiliation:
LumiLeds Lighting, San Jose, California 95131
J.W. Yang
Affiliation:
APA Optics, Blaine, MN 55449
Eicke R. Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, 1 Cyclotron Road, Berkeley, California 94720
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Abstract

Photoluminescence (PL) and Time-resolved PL (TR-PL) are used to measure the luminescence energy and carrier lifetime of InGaN/GaN quantum well (QW) structures as a function of biaxial strain and excitation density. A blueshift of the transition energy and a decrease in the carrier lifetime reveal a field-dependent spatial electron-hole (e-h) wavefunction separation. This behavior is observed both under the application of tensile, biaxial strain, which directly affects the piezo-related field, and under increased excitation density, which effectively screens the electric field. Our results show an increased carrier separation with increasing QW thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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