Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T17:42:10.718Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence and Tem-Investigation of Laser Induced Defects in (AI,Ga)As Heterostructures

Published online by Cambridge University Press:  28 February 2011

B. Zysset ,
R.P. Salathe ,
J.L. Martin ,
R. Gotthardt  and
F.K. Reinhart
B. Zysset
Affiliation:
Institute of Applied Physics, University of Bern, Sidlerstr. 5, CH-3012 Bern, Switzerland
R.P. Salathe
Affiliation:
Generaldirektion PTT, Technical Center, Ostermundigenstr. 93, CH-3029 Bern, Switzerland
J.L. Martin
Affiliation:
Institut de Génie Atomique, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, Switzerland
R. Gotthardt
Affiliation:
Institut de Génie Atomique, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, Switzerland
F.K. Reinhart
Affiliation:
Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, Switzerland
Get access

Abstract

Laser induced defects in (AI,Ga)As heterostructures have been investigated. Luminescencetopography reveals three different defects, a luminescent B, a nonradiative D as well asdark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 419
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. DeLoach, B.C., Hakki, B.W., Hartman, R.L. and D'Asaro, L.A., Proc. IEEE 61, 1042 (1973)Google Scholar
2. Johnson, W.D. Jr, and Miller, B.I., Appl. Phys. Lett. 23, 192 (1973)Google Scholar
3. Petroff, P.M. and Hartman, R.L., Appl. Phys. Lett. 23, 469(1973)Google Scholar
4. Petroff, P.M. and Kimmerling, L.C., Appl. Phys. Lett. 29, 461 (1976)Google Scholar
5. Hora, S.O., Hutchinson, P.W. and Dobson, P.S., Appl. Phys. Lett. 30, 368 (1977)Google Scholar
6. Gilgen, H.H., Salathé, R.P., and Rytz-Froidevaux, Y., Appl. Phys. Lett. 38, 241 (1981)Google Scholar
7. Salathe, R.P., Gilgen, H.H., and Rytz-Froidevaux, Y., IEEE Quantum Electron. QE–17, 1989 (1981)Google Scholar
8. Zysset, B., Salathé, R.P. and Gilgen, H.H., Appl. Phys. Lett. 42, 170 (1983)Google Scholar
9. Vechten, J.A. van, Europhys. J. Physica B + C, 116, 575 (1983)Google Scholar
10. Williams, E.W. and Bebb, H. Barry in Semiconductors and Semimetals Vol. 8, p. 321 ed. Willardson, R.K. and Beer, Albert C. (Academic Press New York 1972)Google Scholar
11. Hwang, C.J., Phys. Rev. 180, 827 (1968)Google Scholar