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Luminescence and Tem-Investigation of Laser Induced Defects in (AI,Ga)As Heterostructures

Published online by Cambridge University Press:  28 February 2011

B. Zysset ,
R.P. Salathe ,
J.L. Martin ,
R. Gotthardt  and
F.K. Reinhart
B. Zysset
Affiliation:
Institute of Applied Physics, University of Bern, Sidlerstr. 5, CH-3012 Bern, Switzerland
R.P. Salathe
Affiliation:
Generaldirektion PTT, Technical Center, Ostermundigenstr. 93, CH-3029 Bern, Switzerland
J.L. Martin
Affiliation:
Institut de Génie Atomique, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, Switzerland
R. Gotthardt
Affiliation:
Institut de Génie Atomique, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, Switzerland
F.K. Reinhart
Affiliation:
Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, Switzerland
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Abstract

Laser induced defects in (AI,Ga)As heterostructures have been investigated. Luminescencetopography reveals three different defects, a luminescent B, a nonradiative D as well asdark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 419
Copyright
Copyright © Materials Research Society 1985

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